jiangsu changji ang electronics technology co., l td sod-323 plastic-encap sulate diodes bzt52c2v4s-bzt52c s zener diode sod-323 fea t ures z planar die construction z 200mw po w er dissipation on ceramic pbc z general purpose, m edium current z ideally suited for autom ated assembly processes z available in l ead free version maximum r a tings ( t a =25 unless other w ise specified ) ch aracteristic symb ol value unit f orwa rd voltage (note 2) @ i f = 10ma v f 0.9 v po wer dissipa tion(note 1) p d 200 mw t hermal resistance from junction to ambient r ja 625 /w junction t emperature t j 150 s torage te mperature range t stg - 5 5 ~ + 150 www.cj-elec.com 1 f,may,2016 = device code, t h e marking bar indicates the cathode solid dot = green molding compound device,if none, the normal device . marking: see table on page2 t he marking code xx
zener volt a ge range (note 2) maximum zener impedance (note 3) maximum reverse current (note 2) typical temperature coefficient @i ztc mv/ test cu rren t i ztc v z @i zt i zt z zt @i zt z zk @i zk i zk i r v r type mar k ing nom(v) min(v) max(v) (ma) ? (ma) a v min max ma bzt52c 2v 4s wx 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5 bzt52c 2v 7s w1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 bzt52c 3v 0s w2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 bzt52c 3v 3s w3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 bzt52c 3v 6s w4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 bzt52c 3v 9s w5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 bzt52c 4v 3s w6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 bzt52c 4v 7s w7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 bzt52c 5v 1s w8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 bzt52c 5v 6s w9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2 2.5 5 bzt52c 6v 2s wa 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 bzt52c 6v 8s wb 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 bzt52c 7v 5s wc 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 bzt52c 8v 2s wd 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 bzt52c 9v 1s we 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 bzt52c 10s wf 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 bzt52c 11s wg 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 bzt52c 12s wh 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 bzt52c 13s wi 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 bzt52c 15s wj 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13 5 bzt52c 16s wk 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14 5 bzt52c 18s wl 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16 5 bzt52c 20s wm 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 bzt52c 22s wn 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 bzt52c 24s wo 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 bzt52c 27s wp 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 bzt52c 30s wq 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 bzt52c 33s wr 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 bzt52c 36s ws 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 bzt52c 39s wt 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 notes: 1. device mounted on ceramic pcb : 7. 6mm x 9.4mm x 0.87mm with pad areas 25mm 2 . 2. short duration test pulse used to minimize self-heating ef fect. 3. f = 1 khz. bzt52c 43 s w u 43 40 . 0 4 6 .0 2 1 00 70 0 1 0.1 32 10 12 5 electrical characteristics t a =25 unless otherwise specified www.cj-elec.com 2 f,may,2016
123456789 1011 1 10 100 11 01 0 0 1 10 100 1000 10 15 20 25 30 35 40 45 50 1 10 100 0 4 8 12 16 20 24 28 32 36 40 44 -5 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 0 50 100 150 200 250 1 10 100 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 1e-4 1e-3 0.01 0.1 1 10 100 0.5 4 . 3 6 . 2 5 . 6 5 . 1 2 . 4 6 . 8 7 . 5 8 . 2 9 . 1 1 0 p d =200mw t a =25 pulsed 0.5 ze n er characteristics v z up to 10 v i z , zener current (ma) v z , ze ner vo ltage (v) t a =25 f=1mhz bias at 50% of v z nom 1v bias 0v bias ty p ical capacitance v z , nominal zener voltage (v) c, capacitance ( p f) 4 3 1 6 p d =200mw ze n er characteristics 11 v t o 43 v i z , zener current (ma) v z , ze ner vo ltage (v) t a =25 pulsed 1 1 1 2 2 4 1 3 1 5 1 8 3 0 3 3 3 9 3 6 2 0 2 2 2 7 v z @ i zt typ i cal t a values fo r bzt52cxxxs series tem p erature coefficients vz , te mperat ure coefficient (mv/ ) v z , nominal zener voltage (v) po w er derating curve power dissipat io n p d (mw) ambient t emperature t a ( ) i z =5ma eff e ct of zener voltage on zener impedance i z =1ma t a =25 i z(ac) =0.1i z(dc) f=1khz v z , nominal zener voltage (v) z zt , dynamic impedance(
) pulsed ty p ical leakage current i r , leakage current ( ua) v z , nominal zener voltage (v) t a =25 t a =100 7 \ s l f d o & k d u d f w h u l v w l f v z z z f m h o h f f r p f,may,2016
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